A review on chemical and mechanical phenomena at the wafer interface during chemical mechanical planarization

Wafer Scale Variation of Planarization Length in Chemical Mechanical Polishing

Chemical mechanical polishing (CMP) is widely used for pla-narization of advanced interconnect and shallow trench isolation structures in integrated circuit manufacture. Of particular concern is within-die variation in the interlevel dielectric or oxide thickness remaining after polish, due to pattern density variations across the die. 1 Recent modeling of CMP has shown that a " planarization l...

Damascene Process and Chemical Mechanical Planarization )e

The constant demand to scale down transistors and improve device performance has led to material as well as process changes in the formation of IC interconnect. Traditionally, aluminum has been used to form the IC interconnects. The process involved subtractive etching of blanket aluminum as defined by the patterned photo resist. However, the scaling and performance demands have led to transiti...

Damascene Process and Chemical Mechanical Planarization

Yield improvement of chemical mechanical planarization processes

Eamkajornsiri, Sutee, "Yield improvement of chemical mechanical planarization processes " (2005). Retrospective Theses and Dissertations. Paper 3043. The quality of this reproduction is dependent upon the quality of the copy submitted. Broken or indistinct print, colored or poor quality illustrations and photographs, print bleed-through, substandard margins, and improper alignment can adversely...

Laser Assisted Chemical Mechanical Polishing for Planarization